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Researchers describe the mechanism of the synthesis of boron-doped graphitic carbon nitride

Researchers describe the mechanism of the synthesis of boron-doped graphitic carbon nitride
Researchers from VSB-TUO have outlined the synthesis mechanism for boron-doped graphitic carbon nitride in a study published in Materials Today Chemistry. A team of experts, led by Professor Petr Praus, examined the impact of chemical mechanisms involved in B-doping on the structure and characteristics of these materials, which is essential for their optimization for practical applications.

"Graphitic carbon nitride is a fascinating material. Despite being composed solely of common elements like carbon and nitrogen, their combination results in a substance with numerous potential applications in semiconductor technology, energy storage, and as a catalyst for chemical reactions. To further enhance its properties, it is often enriched with other elements that enhance its applications. Boron is one such element that our study focuses on," said Daniel Cvejn, the paper's lead author from the Centre for Energy and Environmental Technologies.

The study demonstrates how the co-calcination of a CN precursor and a B-dopant (boric acid) leads to the formation of B-doped graphitic carbon nitrides. Using various analytical techniques such as X-ray diffraction, XPS, FTIR, or NMR, a new structure of these materials was derived, considering the different ratios between precursor and dopant. Thus, the paper contributes to the knowledge of how to efficiently dope graphitic carbon nitrides, potentially paving the way for developing new materials with enhanced properties for a range of technological applications.

Created: 17. 12. 2024
Category:  News
Department: 9110 - Office of Vice-Rector for Strategy and Cooperation
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